Fabrizio Roccaforte: search on Z-Library

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1

Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

Roccaforte, Fabrizio, Fiorenza, Patrick, Greco, Giuseppe, Nigro, Raffaella Lo, Giannazzo, Filippo, Iucolano, Ferdinando, Saggio, Mario

Journal:

Microelectronic Engineering

Year:

2017

Language:

english

File:

PDF, 1.17 MB

english, 2017

2

Effects of interface states and near interface traps on the threshold voltage stability of GaN and SiC transistors employing SiO 2 as gate dielectric

Fiorenza, Patrick, Greco, Giuseppe, Giannazzo, Filippo, Iucolano, Ferdinando, Roccaforte, Fabrizio

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2017

Language:

english

File:

PDF, 1.27 MB

english, 2017

3

Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers

Lo Nigro, Raffaella, SchilirÃ², Emanuela, Mannino, Giovanni, Di Franco, Salvatore, Roccaforte, Fabrizio

Journal:

Journal of Crystal Growth

Year:

2020

File:

PDF, 2.24 MB

2020

4

Richardson’s constant in inhomogeneous silicon carbide Schottky contacts

Roccaforte, Fabrizio, La Via, Francesco, Raineri, Vito, Pierobon, Roberto, Zanoni, Enrico

Journal:

Journal of Applied Physics

Year:

2003

Language:

english

File:

PDF, 370 KB

english, 2003

5

Barrier inhomogeneity and electrical properties of PtâGaN Schottky contacts

Iucolano, Ferdinando, Roccaforte, Fabrizio, Giannazzo, Filippo, Raineri, Vito

Journal:

Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 847 KB

english, 2007

6

Correlation between microstructure and temperature dependent electrical behavior of annealed Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures

Iucolano, Ferdinando, Greco, Giuseppe, Roccaforte, Fabrizio

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 812 KB

english, 2013

7

Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC

Weng, Ming Hung, Roccaforte, Fabrizio, Giannazzo, Filippo, Di Franco, Salvatore, Bongiorno, Corrado, Saggio, Mario, Raineri, Vito

Journal:

Materials Science Forum

Year:

2010

Language:

english

File:

PDF, 5.19 MB

english, 2010

8

Ohmic contacts to Gallium Nitride materials

Greco, Giuseppe, Iucolano, Ferdinando, Roccaforte, Fabrizio

Journal:

Applied Surface Science

Year:

2016

Language:

english

File:

PDF, 2.28 MB

english, 2016

9

Slow and fast traps in metal-oxide-semiconductor capacitors fabricated on recessed AlGaN/GaN heterostructures

Fiorenza, Patrick, Greco, Giuseppe, Iucolano, Ferdinando, Patti, Alfonso, Roccaforte, Fabrizio

Journal:

Applied Physics Letters

Year:

2015

Language:

english

File:

PDF, 1.30 MB

english, 2015

10

Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology

Roccaforte, Fabrizio, Vivona, Marilena, Greco, Giuseppe, Lo Nigro, Raffaella, Giannazzo, Filippo, Rascunà, Simone, Saggio, Mario

Journal:

Materials Science Forum

Year:

2018

Language:

english

File:

PDF, 436 KB

english, 2018

11

[IEEE 2019 AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE) - Torino, Italy (2019.7.2-2019.7.4)] 2019 AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE) - WInSiC4AP: Wide Band Gap Innovative SiC for Advanced Power

Imbruglia, Antonio, Saggio, Mario, Cascino, Salvatore, Minotti, Agatino, Renna, Marco, Gullotta, Giuseppe, Lionetto, Antonio, Primosole, Stradale, Favre, Jacques, Roccaforte, Fabrizio, Fiorenza, Patri

Year:

2019

Language:

english

File:

PDF, 1000 KB

english, 2019

12

Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO 2 /4H-SiC MOSFETs

Fiorenza, Patrick, Giannazzo, Filippo, Cascino, Salvatore, Saggio, Mario, Roccaforte, Fabrizio

Journal:

Applied Physics Letters

Year:

2020

File:

PDF, 1.41 MB

2020

13

Influence of the surface morphology on the channel mobility of lateral implanted 4H-SiC(0001) metal-oxide-semiconductor field-effect transistors

Fiorenza, Patrick, Giannazzo, Filippo, Frazzetto, Alessia, Roccaforte, Fabrizio

Journal:

Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 1.42 MB

english, 2012

14

Metal Organic Chemical Vapor Deposition of nickel oxide thin films for wide band gap device technology

Lo Nigro, Raffaella, Battiato, Sergio, Greco, Giuseppe, Fiorenza, Patrick, Roccaforte, Fabrizio, Malandrino, Graziella

Journal:

Thin Solid Films

Year:

2014

Language:

english

File:

PDF, 911 KB

english, 2014

15

[IEEE 2011 IEEE Nuclear Science Symposium and Medical Imaging Conference (2011 NSS/MIC) - Valencia, Spain (2011.10.23-2011.10.29)] 2011 IEEE Nuclear Science Symposium Conference Record - 4H-SiC Schottky photodiodes for ultraviolet light detection

Mazzillo, Massimo, Sciuto, Antonella, Roccaforte, Fabrizio, Raineri, Vito

Year:

2011

Language:

english

File:

PDF, 769 KB

english, 2011

16

Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates

Li, Fan, Jokubavicius, Valdas, Jennings, Michael R., Yakimova, Rositza, Pérez Tomás, Amador, Russell, Stephen, Sharma, Yogesh, Roccaforte, Fabrizio, Mawby, Philip A., La Via, Francesco

Journal:

Materials Science Forum

Year:

2019

File:

PDF, 2.14 MB

2019

17

Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress

Fiorenza, Patrick, Alessandrino, Mario Santo, Carbone, Beatrice, Di Martino, Clarice, Russo, Alfio, Saggio, Mario, Venuto, Carlo, Zanetti, Edoardo, Giannazzo, Filippo, Roccaforte, Fabrizio

Journal:

Year:

2019

File:

PDF, 2.75 MB

2019

18

Electrical Properties of Thermal Oxide on 3C-SiC Layers Grown on Silicon

Fiorenza, Patrick, Greco, Giuseppe, di Franco, Salvatore, Giannazzo, Filippo, Monnoye, Sylvain, Zielinski, Marcin, La Via, Francesco, Roccaforte, Fabrizio

Journal:

Materials Science Forum

Year:

2019

File:

PDF, 841 KB

2019

19

Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide

Spera, Monia, Greco, Giuseppe, Severino, Andrea, Vivona, Marilena, Fiorenza, Patrick, Giannazzo, Filippo, Roccaforte, Fabrizio

Journal:

Applied Physics Letters

Year:

2020

File:

PDF, 1.04 MB

2020

20

SiO2/SiC MOSFETs Interface Traps Probed by Nanoscale Analyses and Transient Current and Capacitance Measurements

Fiorenza, Patrick, Giannazzo, Filippo, Saggio, Mario Giuseppe, Roccaforte, Fabrizio

Journal:

Materials Science Forum

Year:

2019

File:

PDF, 2.13 MB

2019

21

Temperature dependent forward current-voltage characteristics of Ni/Au Schottky contacts on AlGaN/GaN heterostructures described by a two diodes model

Greco, Giuseppe, Giannazzo, Filippo, Roccaforte, Fabrizio

Journal:

Journal of Applied Physics

Year:

2017

Language:

english

File:

PDF, 802 KB

english, 2017

22

Plasma enhanced atomic layer deposition of Al 2 O 3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments

Schilirò, Emanuela, Fiorenza, Patrick, Greco, Giuseppe, Roccaforte, Fabrizio, Lo Nigro, Raffaella

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Year:

2017

Language:

english

File:

PDF, 1.19 MB

english, 2017

23

Temperature-dependent Fowler-Nordheim electron barrier height in SiO 2 /4H-SiC MOS capacitors

Fiorenza, Patrick, Vivona, Marilena, Iucolano, Ferdinando, Severino, Andrea, Lorenti, Simona, Nicotra, Giuseppe, Bongiorno, Corrado, Giannazzo, Filippo, Roccaforte, Fabrizio

Journal:

Materials Science in Semiconductor Processing

Year:

2018

Language:

english

File:

PDF, 834 KB

english, 2018

24

Effects of Thermal Annealing Processes in Phosphorous Implanted 4H-SiC Layers

Severino, Andrea, Mello, Domenico, Boninelli, Simona, Roccaforte, Fabrizio, Giannazzo, Filippo, Fiorenza, Patrick, Calabretta, Cristiano, Calcagno, Lucia, Piluso, Nicolò, Arena, Giuseppe

Journal:

Materials Science Forum

Year:

2019

File:

PDF, 3.08 MB

2019

25

Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors

Fiorenza, Patrick, Frazzetto, Alessia, Guarnera, Alfio, Saggio, Mario, Roccaforte, Fabrizio

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 1.24 MB

english, 2014

26

Temperature and Light Induced Effects on the Capacitance of 4H-SiC Schottky Photodiodes

Mazzillo, Massimo, Sciuto, Antonella, Catania, Giuseppe, Roccaforte, Fabrizio, Raineri, Vito

Journal:

IEEE Sensors Journal

Year:

2012

Language:

english

File:

PDF, 875 KB

english, 2012

27

Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review

Fiorenza, Patrick, Giannazzo, Filippo, Roccaforte, Fabrizio

Journal:

Year:

2019

Language:

english

File:

PDF, 3.72 MB

english, 2019

28

Fabrication and Characterization of Ohmic Contacts to 3C-SiC Layers Grown on Silicon

Spera, Monia, Greco, Giuseppe, Lo Nigro, Raffaella, di Franco, Salvatore, Corso, Domenico, Fiorenza, Patrick, Giannazzo, Filippo, Zielinski, Marcin, La Via, Francesco, Roccaforte, Fabrizio

Journal:

Materials Science Forum

Year:

2019

File:

PDF, 694 KB

2019

29

Ni2Si/4H-SiC Schottky Photodiodes for Ultraviolet Light Detection

Mazzillo, Massimo, Sciuto, Antonella, Roccaforte, Fabrizio, Bongiorno, Corrado, Modica, Roberto, Marchese, Salvatore, Badalà, Paolo, Calì, Denise, Patanè, Francesco, Carbone, Beatrice, Russo, Alfio, C

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 699 KB

english, 2016

30

Atomic Layer Deposition of High-k Insulators on Epitaxial Graphene: A Review

Giannazzo, Filippo, SchilirÃ², Emanuela, Lo Nigro, Raffaella, Roccaforte, Fabrizio, Yakimova, Rositsa

Journal:

Applied Sciences

Year:

2020

File:

PDF, 2.56 MB

2020

31

Large Area Visible Blind 4H-SiC p+/N UV Photodiode Obtained by Aluminium Implantation

Sciuto, Antonella, Mazzillo, Massimo, Di Franco, Salvatore, Roccaforte, Fabrizio

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 304 KB

english, 2016

32

[IEEE 2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) - Aci Castello (CT), Italy (2014.10.12-2014.10.15)] 2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) - Thermal and plasma-enhanced atomic layer deposition of hafnium oxide on semiconductor substrates

Lo Nigro, Raffaella, Schiliro, Emanuela, Tudisco, Cristina, Condorelli, Guglielmo G., Fiorenza, Patrick, Gargouri, Hassan, Roccaforte, Fabrizio

Year:

2014

Language:

english

File:

PDF, 485 KB

english, 2014

33

Interface Electrical Properties of Al 2 O 3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer

Fisichella, Gabriele, Schilirò, Emanuela, Di Franco, Salvatore, Fiorenza, Patrick, Lo Nigro, Raffaella, Roccaforte, Fabrizio, Ravesi, Sebastiano, Giannazzo, Filippo

Journal:

ACS Applied Materials & Interfaces

Year:

2017

Language:

english

File:

PDF, 5.19 MB

english, 2017

34

Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes

Raineri, Vito, Roccaforte, Fabrizio, Libertino, Sebania, Ruggiero, Alfonso, Massimino, V., Calcagno, Lucia

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 311 KB

english, 2006

35

Annealing Temperature Dependence of the Electrically Active Profiles and Surface Roughness in Multiple Al Implanted 4H-SiC

Giannazzo, Filippo, Roccaforte, Fabrizio, Salinas, Dario, Raineri, Vito

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 619 KB

english, 2009

36

Schottky-Ohmic Transition in Nickel Silicide/SiC System: Is it Really a Solved Problem?

Calcagno, Lucia, Zanetti, E., La Via, Francesco, Roccaforte, Fabrizio, Raineri, Vito, Libertino, Sebania, Giannazzo, Filippo, Mauceri, Marco, Musumeci, Paolo

Journal:

Materials Science Forum

Year:

2003

Language:

english

File:

PDF, 374 KB

english, 2003

37

AIP Conference Proceedings [AIP 2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES: Proceedings of the E-MRS Symposium∗ F∗ - Strasbourg, (France) (8–10 October 2010)] - Evolution of the electrical characteristics of Pt∕3C-SiC Schottky contacts upon thermal annealing

Eriksson, Jens, Roccaforte, Fabrizio, Reshanov, Sergey, Giannazzo, Filippo, Lo Nigro, Raffaella, Raineri, Vito, Ferro, Gabriel, Siffert, Paul

Year:

2010

Language:

english

File:

PDF, 522 KB

english, 2010

38

Hot Electron Transistors Based on Graphene/AlGaN/GaN Vertical Heterostructures

Fisichella, Gabriele, Greco, Giuseppe, Di Franco, Salvatore, Lo Nigro, Raffaella, Schilirò, Emanuela, Roccaforte, Fabrizio, Giannazzo, Filippo

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 330 KB

english, 2016

39

Nanoscale probing of the lateral homogeneity of donors concentration in nitridated SiO 2 /4H–SiC interfaces

Fiorenza, Patrick, Di Franco, Salvatore, Giannazzo, Filippo, Roccaforte, Fabrizio

Journal:

Year:

2016

Language:

english

File:

PDF, 1.00 MB

english, 2016

40

Schottky Barrier Inhomogeneities in Nickel Silicide Transrotational Contacts

Alberti, Alessandra, Roccaforte, Fabrizio, Libertino, Sebania, Bongiorno, Corrado, Magna, Antonino La

Journal:

Applied Physics Express

Year:

2011

Language:

english

File:

PDF, 1.96 MB

english, 2011

41

Barrier Inhomogeneity of Ni Schottky Contacts to Bulk GaN

Greco, Giuseppe, Giannazzo, Filippo, Fiorenza, Patrick, Di Franco, Salvatore, Alberti, Alessandra, Iucolano, Ferdinando, Cora, Ildiko, Pecz, Bela, Roccaforte, Fabrizio

Journal:

physica status solidi (a)

Year:

2017

Language:

english

File:

PDF, 1.83 MB

english, 2017

42

A look underneath the SiO 2 /4H-SiC interface after N 2 O thermal treatments

Fiorenza, Patrick, Giannazzo, Filippo, Swanson, Lukas K, Frazzetto, Alessia, Lorenti, Simona, Alessandrino, Mario S, Roccaforte, Fabrizio

Journal:

Beilstein Journal of Nanotechnology

Year:

2013

Language:

english

File:

PDF, 1.03 MB

english, 2013

43

Nitride Semiconductor Technology (Power Electronics and Optoelectronic Devices) || Technologies for Normallyâoff GaN HEMTs

Roccaforte, Fabrizio, Leszczynski, Mike

Year:

2020

File:

PDF, 1.09 MB

2020

44

High responsivity 4H-SiC Schottky UV photodiodes based on the pinch-off surface effect

Sciuto, Antonella, Roccaforte, Fabrizio, Di Franco, Salvatore, Raineri, Vito, Bonanno, Giovanni

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 356 KB

english, 2006

45

Nano-Electro-Structural Evolution of Ni-Si Ohmic Contacts to 3C-SiC

Eriksson, Jens, Roccaforte, Fabrizio, Giannazzo, Filippo, Lo Nigro, Raffaella, Moschetti, Giuseppe, Raineri, Vito, Lorenzzi, Jean, Ferro, Gabriel

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 945 KB

english, 2009

46

Electrical Properties of Graphene Contacts to AlGaN/GaN Heterostructures

Fisichella, Gabriele, Greco, Giuseppe, Roccaforte, Fabrizio, Giannazzo, Filippo

Journal:

Materials Science Forum

Year:

2015

Language:

english

File:

PDF, 2.06 MB

english, 2015

47

Impact of contact resistance on the electrical properties of MoS 2 transistors at practical operating temperatures

Giannazzo, Filippo, Fisichella, Gabriele, Piazza, Aurora, Di Franco, Salvatore, Greco, Giuseppe, Agnello, Simonpietro, Roccaforte, Fabrizio

Journal:

Beilstein Journal of Nanotechnology

Year:

2017

Language:

english

File:

PDF, 3.11 MB

english, 2017

48

Nitride Semiconductor Technology (Power Electronics and Optoelectronic Devices) || Vertical GaN Power Devices

Roccaforte, Fabrizio, Leszczynski, Mike

Year:

2020

File:

PDF, 1.41 MB

2020

49

Schottky-Ohmic Transition in Nickel Silicide/SiC-4H System: the Effect of Non Uniform Schottky Barrier

La Via, Francesco, Roccaforte, Fabrizio, Raineri, Vito, Mauceri, Marco, Ruggiero, Alfonso, Musumeci, Paolo, Calcagno, Lucia

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 262 KB

english, 2004

50

Silicon Carbide: Defects and Devices

Roccaforte, Fabrizio, Di Franco, Salvatore, Giannazzo, Filippo, La Via, Francesco, Libertino, Sebania, Raineri, Vito, Saggio, M., Zanetti, E.

Journal:

Solid State Phenomena

Year:

2005

Language:

english

File:

PDF, 537 KB

english, 2005

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